Physics based analytic equations for charge carrier profile and currentdensity are derived by solving the carrier transport and the continuityequations for metal-intrinsic semiconductor-metal diodes. Using the analyticmodels a physics based method is developed to extract the built-in potential$V_{bi}$ from current density-voltage ($J$-$V$) characteristics. The proposedmethod is thoroughly validated using numerical simulation results. Afterverifying the applicability of the proposed theory on experimentally fabricatedorganic diodes, $V_{bi}$ is extracted using the present method showing a goodagreement with the reported value.
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